transistor characteristics
英 [trænˈzɪstə(r) ˌkærɪktəˈrɪstɪks]
美 [trænˈzɪstər ˌkɛrəktəˈrɪstɪks]
网络 晶体管特性; 电晶体特性
双语例句
- Transistor voltage current characteristics
晶体管电压电流特性 - Transistor characteristics curve tracer
晶体管特性曲线图示仪 - It suggests the significance of intramolecular charge transfer on the transistor characteristics.
这显示了在电晶体中有显著的分子内电子转移。 - Temperature Effect of MOS Power Transistor Characteristics
MOS功率晶体管特性的温度效应 - Experimented results show that the transistor has low driving voltage and no-saturated current-voltage characteristics.
结果表明，该三极管驱动电压低，呈不饱和电流-电压特性。 - Based on the bulk driven PMOS transistor, a low voltage CMOS cascade current mirror ( BDCCM) is presented, then the input/ output impedance and frequency characteristics are discussed.
基于衬底驱动PMOS晶体管设计了低压PMOS衬底驱动CMOS共源共栅电流镜电路（BDCCM），并讨论分析了其输入阻抗、输出阻抗和频率特性。 - A Method to Structure Circuit Models for Transistor Based on the Ports 'V-I Characteristics
一种基于外部特性的晶体管电路模型的构建方法 - Improvement of Electro Mechanical Single Electron Transistor Semi-classical Model and Investigation of Its Transport Characteristics
机电单电子晶体管半经典模型的改进和输运特性的研究 - An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.
对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。 - In this paper, process-induced defects in nitrogen doped CZ silicon ( NCZ-Si) and their influence on power diode and switching transistor characteristics are investigated.
在本文中，我们研究了掺氮直拉硅单晶中工艺诱生缺陷的特点以及它们对功率二极管和开关晶体管性能的影响。 - In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。 - A-Si: ( H, O) Was Deposited on SiO2 for Improving the Transistor Characteristics
一种无定形SiO2上沉积含氢的非晶硅氧改善硅平面管特性的方法 - This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region.
该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。 - Real space transfer transistor ( RSTT) is a novel N-type negative differential resistance semiconductor device which has some obvious characteristics, such as high frequency, high speed and controllable NDR.
实空间转移晶体管是一种新型N型负阻半导体器件，具有高频、高速、可控负阻等显著优点，可大大简化集成电路的复杂程度。 - The main work of this thesis analyzes the organic static induction transistor's operational mechanism, and researchs the change of gate length, change of gate-drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor.
本论文的主要工作是解析有机静电感应三极管的工作机理，并研究了栅极长度变化、栅漏极间距变化和导电沟道的宽度变化对有机静电感应三极管工作特性的影响。 - In this technique, Z parameter symbolic network functions for transistor equivalent circuit are used to calculate transistor AC characteristics, eliminating the time consuming process in the conventional method, where characteristics are calculated by solving node voltage equations. This technique greatly increases extraction efficiency.
它采用晶体管等效电路的Z参数符号网络函数来计算晶体管交流特性，消除了常规方法中通过求节点电压方程获得特性的耗时过程，因此大大提高了提取效率。 - Transistor Characteristics Testing System Based on Microcomputer
基于PC机的晶体管特性测试系统 - It is shown that the new transistor has more uniform characteristics of current gain at low current level, and an excellent low-frequency noise figure, so that it is a promising low noise device at low frequency with simpler processes.
实验结果表明，漂洗发射极晶体管的小电流增益均匀性好，具有良好的低频噪声特性，是一种工艺比较简化，性能较好的低频低噪声器件。 - The improved Experiment of Testing the Transistor Characteristics
改进的三极管特性测试实验 - Effects of Distribution of Ga on Transistor's V-I Characteristics
Ga杂质分布对晶体管V-I特性的影响 - Because of microwave power transistor being worKed mostly under pulsed condition, it is becoming more and more important to study the transient characteristics of devices.
鉴于越来越多的领域要求微波功率管工作于脉冲应用状态，研究管子的瞬态温度特性就显得日益重要。 - Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics
电容耦合三结单电子晶体管特性分析 - The PHEMT ( pseudomorphic high electron mobility transistor) device has outstanding high-frequency characteristics, power characteristics and low-noise characteristics, and it is one of the most competitions in the field of microwave and millimeter-wave monolithic integrated circuits.
PHEMT（赝匹配型高电子迁移率管）器件具有优异的高频特性、功率特性和低噪声特性，使之成为微波/毫米波单片集成电路领域中最有竞争力的有源器件之一。 - As the basic unit of micro electronic integrated circuit, Field Effect Transistor ( FET) possesses the characteristics of well-developed fabrication process and simple structure.
场效应晶体管作为微电子领域集成芯片的基本组成单元，具有制作工艺成熟，构造简单等特点。 - High electron mobility transistors ( High Electron MobilityTransistor) as a field-effect transistor, have been widely used in communications, electronics and other fields, it has the characteristics of high-power, low-noise, high-frequency, high-speed.
而高电子迁移率晶体管（HighElectronMobilityTransistor）作为场效应晶体管中的一种，也开始广泛应用于通信、电子等领域，它具有大功率、低噪声、高频、高速等特点。